Band structure of MoSTe Janus nanotubes

Band structure of hydrogenated Si nanosheets and nanotubes.

The band structures of fully hydrogenated Si nanosheets and nanotubes are elucidated by the use of an empirical tight-binding model. The hydrogenated Si sheet is a semiconductor with an indirect band gap of about 2.2 eV. The symmetries of the wavefunctions allow us to explain the origin of the gap. We predict that, for certain chiralities, hydrogenated Si nanotubes represent a new type of semic...

Electronic band structure of a Carbon nanotube superlattice

By employing the theoretical method based on tight-binding, we study electronic band structure of single-wall carbon nanotube (CNT) superlattices, which the system is the made of the junction between the zigzag and armchair carbon nanotubes. Exactly at the place of connection, it is appeared the pentagon–heptagon pairs as topological defect in carbon hexagonal network. The calculations are base...

Electronic band structure of a Carbon nanotube superlattice

By employing the theoretical method based on tight-binding, we study electronic band structure of single-wall carbon nanotube (CNT) superlattices, which the system is the made of the junction between the zigzag and armchair carbon nanotubes. Exactly at the place of connection, it is appeared the pentagon–heptagon pairs as topological defect in carbon hexagonal network. The calculations are base...

Direct measurement of strain-induced changes in the band structure of carbon nanotubes.

The effect of uniaxial strain on the optical transition energies of single-walled carbon nanotubes with known chiral indices was measured by Rayleigh scattering spectroscopy. Existing theory accurately predicts the trends in the measured strain-induced shifts, but overestimates their magnitude. Modification of the analysis to account for internal sublattice relaxation results in quantitative ag...

Electronic Band Structure of Carbon Nanotubes in Equilibrium and None-Equilibrium Regimes